MSP0305W Datasheet, PDF (1/6 Pages) MORE Semiconductor Company Limited – -30V(D-S) P-Channel Enhancement Mode Power MOS FET

MSP0305W
-30V(D-S) P-Channel Enhancement Mode Power MOS FET
General Features
● V_DS = -30V,I_D = -5.1A
R_DS(ON) < 105mΩ @ V_GS=-4.5V
R_DS(ON) < 55mΩ @ V_GS=-10V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Lead Free
Application
● PWM applications
● Load switch
● Power management
PIN Configuration
Marking and pin Assignment
D
G
SOP-8 top view
S
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSP0305W
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (T_A=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
I_D
Drain Current-Pulsed ^{(Note 1)}
I_DM
Maximum Power Dissipation
P_D
Operating Junction and Storage Temperature Range
T_J,T_STG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient ^{(Note 2)}
R_θJA
Limit
-30
±20
-5.1
-20
2.5
-55 To 150
Unit
V
V
A
A
W
℃
50
℃/W
MORE Semiconductor Company Limited
http://www.moresemi.com
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