MSP0304 Datasheet, PDF (1/6 Pages) MORE Semiconductor Company Limited – -30V(D-S) P-Channel Enhancement Mode Power MOS FET

MSP0304
-30V(D-S) P-Channel Enhancement Mode Power MOS FET
General Features
● V_DS = -30V,I_D = -4.2A
R_DS(ON) < 130mΩ @ V_GS=-2.5V
R_DS(ON) < 75mΩ @ V_GS=-4.5V
R_DS(ON) < 55mΩ @ V_GS=-10V
● High power and current handing capability
● Lead free product is acquired
● Surface mount package
Lead Free
Application
●PWM applications
●Load switch
●Power management
Marking and Pin Assignment
PIN Configuration
D
G
SOT-23 top view
S
Schematic diagram
Package Marking And Ordering Information
Device Marking
Device
Device Package
MSP0304
SOT-23
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
I_D
Drain Current-Pulsed (Note 1)
I_DM
Maximum Power Dissipation
P_D
Operating Junction and Storage Temperature Range
T_J,T_STG
Limit
-30
±12
-4.2
-30
1.2
-55 To 150
Unit
V
V
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
R_θJA
104
℃ /W
MORE Semiconductor Company Limited
http://www.moresemi.com
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