MSP0205 Datasheet, PDF (1/6 Pages) MORE Semiconductor Company Limited – -20V(D-S) P-Channel Enhancement Mode Power MOS FET

MSP0205
-20V(D-S) P-Channel Enhancement Mode Power MOS FET
General Features
● V_DS = -20V,I_D = -4.1A
R_DS(ON) <75mΩ @ V_GS=-2.5V
R_DS(ON) < 52mΩ @ V_GS=-4.5V
● High power and current handing capability
● Lead free product is acquired
● Surface mount package
Application
● PWM applications
● Load switch
● Power management
PIN Configuration
SOT-23 top view
Lead Free
Marking and pin assignment
D
G
S
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSP0205
SOT-23
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (T_A=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
T_C =25℃
Continuous Drain Current
T_C =70℃
T_A =25℃
I_D
T_A =70℃
Drain Current -Pulsed (Note 1)
I_DM
Maximum Power Dissipation
P_D
Operating Junction and Storage Temperature Range
T_J,T_STG
Limit
-20
±12
-4.1
-3.2
-3
-2.3
-15
1.7
-55 To 150
Unit
V
V
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
R_θJA
74
℃/W
MORE Semiconductor Company Limited
http://www.moresemi.com
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