MSP0203 Datasheet, PDF (1/6 Pages) MORE Semiconductor Company Limited – -20V(D-S) P-Channel Enhancement Mode Power MOS FET

MSP0203
-20V(D-S) P-Channel Enhancement Mode Power MOS FET
GENERAL FEATURES
● V_DS = -20V,I_D = -3A
R_DS(ON) < 140mΩ @ V_GS=-2.5V
R_DS(ON) < 110mΩ @ V_GS=-4.5V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Application
●PWM applications
●Load switch
●Power management
Lead Free
Marking and pin Assignment
PIN Configuration
D
G
SOT-23 top view
S
Schematic diagram
Package Marking And Ordering Information
Device Marking
Device
Device Package
MSP0203
SOT-23
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
I_D
Drain Current -Pulsed (Note 1)
I_DM
Maximum Power Dissipation
P_D
Operating Junction and Storage Temperature Range
T_J,T_STG
Limit
-20
±12
-3
-10
1
-55 To 150
Unit
V
V
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
R_θJA
125
℃/W
MORE Semiconductor Company Limited
http://www.moresemi.com
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