|
MSN7002Z Datasheet, PDF (1/4 Pages) MORE Semiconductor Company Limited – 700V(D-S) N-Channel Enhancement Mode Power MOS FET | |||
|
MSN7002Z
700V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
â VDS =700V,ID =2A
RDS(ON) <6.5 ⦠@ VGS=10V
â High density cell design for ultra low Rdson
â Fully characterized avalanche voltage and current
â Good stability and uniformity with high EAS
â Excellent package for good heat dissipation
â Special process technology for high ESD capability
Lead Free
Application
â Power switching application
â Hard switched and high frequency circuits
â Electronic ballast and transformer
PIN Configuration
Marking and pin assignment
TO-251 top view
Schematic diagram
Package Marking and Ordering Information
Device Marking Device Device Package
MSN7002Z
MSN7002Z
TO-251
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25âunless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100â)
ID (100â)
Pulsed Drain Current
IDM
Maximum Power Dissipation
PD
Derating factor
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
700
±30
2
1.25
8
28
0.20
120
-55 To 150
Unit
V
V
A
A
A
W
W/â
mJ
â
MORE Semiconductor Company Limited
http://www.moresemi.com
1/4
|
▷ |