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MSN7002E Datasheet, PDF (1/6 Pages) MORE Semiconductor Company Limited – 60V(D-S) N-Channel Enhancement Mode Power MOS FET | |||
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MSN7002E
60V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
â VDS = 60V,ID = 0.3A
RDS(ON) < 3⦠@ VGS=5V
RDS(ON) < 2⦠@ VGS=10V
ESD Ratingï¼HBM 2300V
â High power and current handing capability
â Lead free product is acquired
â Surface mount package
â ESD protected
Lead Free
Application
âDirect logic-level interface: TTL/CMOS
âDrivers: relays, solenoids, lamps, hammers,display,
memories, transistors, etc.
âBattery operated systems
âSolid-state relays
PIN Configuration
Marking and pin assignment
SOT-23 top view
Schematic diagram
Package Marking And Ordering Information
Device Marking
Device
MSN7002E
Device Package
SOT-23
Reel Size
Ã180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25âunless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current (TJ =150â)
Drain Current-Pulsed (Note 1)
TA =25â
TA =100â
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
VGS
ID
IDM
PD
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Limit
60
±20
0.3
0.19
0.8
0.35
-55 To 150
350
Unit
V
V
A
A
W
â
â/W
MORE Semiconductor Company Limited
http://www.moresemi.com
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