MSN6510F Datasheet, PDF (1/5 Pages) MORE Semiconductor Company Limited – 650V(D-S) N-Channel Enhancement Mode Power MOS FET

MSN6510F
650V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● V_DS =650V,I_D =10A
R_DS(ON) <0.95 Ω @ V_GS=10V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high E_AS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Lead Free
Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply
PIN Configuration
Marking and pin assignment
TO-220F top view
Schematic diagram
Package Marking and Ordering Information
Device Marking Device Device Package
MSN6510F
MSN6510F
TO-220F-3L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (T_C=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Continuous(T_C=100℃)
I_D
I_D (100℃)
Pulsed Drain Current
I_DM
Maximum Power Dissipation
P_D
Derating factor
Single pulse avalanche energy ^{(Note 5)}
E_AS
Operating Junction and Storage Temperature Range
T_J,T_STG
Limit
650
±30
10
6
40
60
0.4
700
-55 To 155
Unit
V
V
A
A
A
W
W/℃
mJ
℃
MORE Semiconductor Company Limited
http://www.moresemi.com
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