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MSN6502F Datasheet, PDF (1/5 Pages) MORE Semiconductor Company Limited – 650V(D-S) N-Channel Enhancement Mode Power MOS FET | |||
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MSN6502F
650V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
â VDS =650V,ID =2A
RDS(ON) <5.0 ⦠@ VGS=10V
â High density cell design for ultra low Rdson
â Fully characterized avalanche voltage and current
â Good stability and uniformity with high EAS
â Excellent package for good heat dissipation
â Special process technology for high ESD capability
Lead Free
Application
â Power switching application
â Hard switched and high frequency circuits
â Uninterruptible power supply
PIN Configuration
Marking and pin assignment
TO-220F top view
Schematic diagram
Package Marking and Ordering Information
Device Marking Device Device Package
MSN6502F
MSN6502F
TO-220F-3L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25âunless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Continuous(TC=100â)
ID
ID (100â)
Pulsed Drain Current
IDM
Maximum Power Dissipation
PD
Derating factor
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
650
±30
2
1.35
6
35
0.28
240
-55 To 150
Unit
V
V
A
A
A
W
W/â
mJ
â
MORE Semiconductor Company Limited
http://www.moresemi.com
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