MSN2020 Datasheet, PDF (1/6 Pages) MORE Semiconductor Company Limited – 20V(D-S) N-Channel Enhancement Mode Power MOS FET

MSN2020
20V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● V_DS = 20V,I_D = 0.9A
R_DS(ON) < 360mΩ @ V_GS=2.5V
R_DS(ON) < 310m Ω @ V_GS=4.5V
● High power and current handing capability
● Lead free product is acquired
● Surface mount package
● ESD protected
Lead Free
Application
● DC-DC converter circuit
● Small Signal Switch
● Load switch
● Level Shift
PIN Configuration
3D
G1
2S
Marking and pin assignment
SOT-23 top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
A20E
MSN2020
SOT-23
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (T_A=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
I_D
Drain Current-Pulsed (Note 1)
I_DM
Maximum Power Dissipation
P_D
Operating Junction and Storage Temperature Range
T_J,T_STG
Limit
20
±6
0.9
1.4
370
-55 To 150
Unit
V
V
A
A
mW
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
R_θJA
125
℃/W
MORE Semiconductor Company Limited
http://www.moresemi.com
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