MSN2013K Datasheet, PDF (1/6 Pages) MORE Semiconductor Company Limited – 200V(D-S) N-Channel Enhancement Mode Power MOS FET

MSN2013K
200V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● V_DS = 200V,I_D =13A
R_DS(ON) <140mΩ @ V_GS=10V
(Typ:123mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high E_AS
● Excellent package for good heat dissipation
Lead Free
Application
● Boost converters
● LED backlighting
● Uninterruptible power supply
PIN Configuration
Marking and pin assignment
TO-220-3L top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN2013K
MSN2013K
TO-220-3L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (T_C=25℃unless otherwise noted)
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
I_D
Drain Current-Continuous
I_D (100℃)
Drain Current-Continuous(TC=100℃)
I_DM
Pulsed Drain Current
P_D
Maximum Power Dissipation
Derating factor
E_AS
Single pulse avalanche energy ^{(Note 5)}
T_J,T_STG
Operating Junction and Storage Temperature Range
Limit
200
±20
13
9
45
95
0.6
200
-55 To 175
Unit
V
V
A
A
A
W
W/℃
mJ
℃
MORE Semiconductor Company Limited
http://www.moresemi.com
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