MSN2005Z Datasheet, PDF (1/6 Pages) MORE Semiconductor Company Limited – 200V(D-S) N-Channel Enhancement Mode Power MOS FET

MSN2005Z
200V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● V_DS = 200V,I_D =5A
R_DS(ON) < 580mΩ @ V_GS=10V (Typ:520mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation
Lead Free
Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply
PIN Configuration
Marking and pin assignment
TO-251 top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN2005Z
MSN2005Z
TO-251
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (T_A=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
I_D
Drain Current-Pulsed ^{(Note 1)}
I_DM
Maximum Power Dissipation
P_D
Operating Junction and Storage Temperature Range
T_J,T_STG
Limit
200
±20
5
20
30
-55 To 150
Unit
V
V
A
A
W
℃
MORE Semiconductor Company Limited
http://www.moresemi.com
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