MSN2004W Datasheet, PDF (1/6 Pages) MORE Semiconductor Company Limited – 200V(D-S) N-Channel Enhancement Mode Power MOS FET

MSN2004W
200V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● V_DS =200V,I_D =3.9A
R_DS(ON) < 79mΩ @ V_GS=10V
（Typ：56mΩ）
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Low gate to drain charge to reduce switching losses
Lead Free
Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply
PIN Configuration
Marking and pin assignment
SOP-8 top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN2004W
MSN2004W
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (T_A=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
I_D
Drain Current-Continuous(T_C=100℃)
I_D (100℃)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
I_DM
P_D
T_J,T_STG
Limit
200
±20
3.9
3
30
3
-55 To 150
Unit
V
V
A
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Case^{(Note 2)}
R_θJC
41.7
℃/W
MORE Semiconductor Company Limited
http://www.moresemi.com
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