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MSN2002T Datasheet, PDF (1/6 Pages) MORE Semiconductor Company Limited – 200V(D-S) N-Channel Enhancement Mode Power MOS FET | |||
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MSN2002T
200V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
â VDS = 200V,ID =2A
RDS(ON) < 580m⦠@ VGS=10V
(Typ:520mâ¦)
â High density cell design for ultra low Rdson
â Fully characterized avalanche voltage and current
â Excellent package for good heat dissipation
Application
â Power switching application
â Hard switched and high frequency circuits
â Uninterruptible power supply
Lead Free
PIN Configuration
D
G
S
TO-92 view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN2002T
TO-92
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TA=25âunless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Limit
200
±20
2
8
3
-55 To 150
41.7
Unit
V
V
A
A
W
â
â/W
MORE Semiconductor Company Limited
http://www.moresemi.com
1/6
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