MSN15B5H Datasheet, PDF (1/6 Pages) MORE Semiconductor Company Limited – 150V(D-S) N-Channel Enhancement Mode Power MOS FET

MSN15B5H
150V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● V_DSS =150V,I_D =150A
R_DS(ON) < 8mΩ @ V_GS=10V （Typ：6.6 mΩ）
● Good stability and uniformity with high E_AS
● Special process technology for high ESD capability
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation
Application
● Automotive applications
● Hard switched and high frequency circuits
● Uninterruptible power supply
PIN Configuration
Marking and pin assignment
Lead Free
TO-247 top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN15B5H
MSN15B5H
TO-247
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (T_C=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGS
Drain Current-Continuous
Drain Current-Continuous(T_C=100℃)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
Single pulse avalanche energy ^{(Note 3)}
Peak Diode Recovery dv/dt ^{(Note 4)}
I_D
I_D (100℃)
I_DM
P_D
E_AS
dv/dt
Operating Junction and Storage Temperature Range
T_J,T_STG
Limit
150
±20
150
106
600
460
3.07
3100
18.5
-55 To 175
Unit
V
V
A
A
A
W
W/℃
mJ
V/ns
℃
MORE Semiconductor Company Limited
http://www.moresemi.com
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