MSN1505W Datasheet, PDF (1/6 Pages) MORE Semiconductor Company Limited – 150V(D-S) N-Channel Enhancement Mode Power MOS FET

MSN1505W
150V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● V_DS =150V,I_D =5.2A
R_DS(ON) < 44mΩ @ V_GS=10V
（Typ：31mΩ）
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Low gate to drain charge to reduce switching losses
Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply
PIN Configuration
Lead Free
Marking and pin assignment
SOP-8 top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN1505W
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (T_A=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
I_D
Drain Current-Continuous(T_C=100℃)
I_D (100℃)
Pulsed Drain Current(Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
I_DM
P_D
T_J,T_STG
Limit
150
±20
5.2
3.7
42
3.5
-55 To 150
Unit
V
V
A
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Case^{(Note 2)}
R_θJC
35.7
℃ /W
MORE Semiconductor Company Limited
http://www.moresemi.com
1/6