MSN1502U Datasheet, PDF (1/6 Pages) MORE Semiconductor Company Limited – 150V(D-S) N-Channel Enhancement Mode Power MOS FET

MSN1502U
150V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● V_DS = 150V,I_D = 2A
R_DS(ON) < 300mΩ @ V_GS=10V
(Typ:260mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation
Lead Free
Application
● Power switching application
● Hard switched and high frequency circuits
PIN Configuration
Marking and pin assignment
SOT-223-3L view
D
G
S
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN1502U
MSN1502U
SOT-223-3L
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (T_A=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
I_D
Drain Current-Pulsed ^{(Note 1)}
I_DM
Maximum Power Dissipation
P_D
Operating Junction and Storage Temperature Range
T_J,T_STG
Limit
150
±20
2
6
2
-55 To 150
Unit
V
V
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient ^{(Note 2)}
R_θJA
62.5
℃/W
MORE Semiconductor Company Limited
http://www.moresemi.com
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