|
MSN138-SOT23 Datasheet, PDF (1/6 Pages) MORE Semiconductor Company Limited – 50V(D-S) N-Channel Enhancement Mode Power MOS FET | |||
|
MSN138
50V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
â VDS = 50V,ID = 0.22A
RDS(ON) < 3⦠@ VGS=5V
RDS(ON) < 2⦠@ VGS=10V
â Lead free product is acquired
â Surface mount package
Application
âDirect logic-level interface: TTL/CMOS
âDrivers: relays, solenoids, lamps, hammers , display,
memories, transistors, etc.
âBattery operated systems
âSolid-state relays
PIN Configuration
Lead Free
Marking and pin assignment
SOT-23 top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
MSN138
Device Package
SOT-23
Reel Size
Ã180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25âunless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
50
±20
0.22
0.88
0.35
-55 To 150
Unit
V
V
A
A
W
â
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
350
â/W
MORE Semiconductor Company Limited
http://www.moresemi.com
1/6
|
▷ |