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MSN10B0K Datasheet, PDF (1/6 Pages) MORE Semiconductor Company Limited – 100V(D-S) N-Channel Enhancement Mode Power MOS FET | |||
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MSN10B0K
100V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
â VDS = 100V,ID =100A
RDS(ON) < 13m⦠@ VGS=10V (Typ:9.9mâ¦)
â Special process technology for high ESD capability
â High density cell design for ultra low Rdson
â Fully characterized avalanche voltage and current
â Good stability and uniformity with high EAS
â Excellent package for good heat dissipation
Application
â Power switching application
â Hard switched and high frequency circuits
â Uninterruptible power supply
PIN Configuration
Lead Free
Marking and pin assignment
TO-220-3L top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN10B0K
MSN10B0K
TO-220-3L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25âunless otherwise noted)
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID
Drain Current-Continuous
ID (100â)
Drain Current-Continuous(TC=100â)
IDM
Pulsed Drain Current
PD
Maximum Power Dissipation
Derating factor
EAS
Single pulse avalanche energy (Note 5)
TJ,TSTG
Operating Junction and Storage Temperature Range
Limit
100
±20
100
80
380
200
1.33
800
-55 To 175
Unit
V
V
A
A
A
W
W/â
mJ
â
MORE Semiconductor Company Limited
http://www.moresemi.com
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