MSN1014W Datasheet, PDF (1/7 Pages) MORE Semiconductor Company Limited – 100V(D-S) N-Channel Enhancement Mode Power MOS FET

MSN1014W
100V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● V_DS =100V,I_D =14A
R_DS(ON)=8.8mΩ (typical) @ V_GS=10V
R_DS(ON)=9.8mΩ (typical) @ V_GS=4.5V
● Excellent gate charge x R_DS(on) product(FOM)
● Very low on-resistance R_DS(on)
● 150 °C operating temperature
● Pb-free lead plating
● 100% UIS tested
Lead Free
Application
● DC/DC Converter
● Ideal for high-frequency switching and
synchronous rectification
Marking and pin assignment
PIN Configuration
SOP-8 top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN1014W
MSN1014W
SOP-8
Reel Size
-
Tape width
-
Quantity
2500 units
Absolute Maximum Ratings (T_A=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Continuous(T_C=100℃)
I_D
I_D (100℃)
Pulsed Drain Current
I_DM
Maximum Power Dissipation
P_D
Derating factor
Single pulse avalanche energy ^{(Note 5)}
E_AS
Operating Junction and Storage Temperature Range
T_J,T_STG
Limit
100
±20
14
10
56
3.5
0.028
196
-55 To 150
Unit
V
V
A
A
A
W
W/℃
mJ
℃
MORE Semiconductor Company Limited
http://www.moresemi.com
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