MSN1010W Datasheet, PDF (1/6 Pages) MORE Semiconductor Company Limited – 100V(D-S) N-Channel Enhancement Mode Power MOS FET

MSN1010W
100V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● V_DS = 100V,I_D =10A
R_DS(ON) < 17mΩ @ V_GS=10V (Typ:14mΩ)
R_DS(ON) < 20mΩ @ V_GS=4.5V (Typ:15.2mΩ)
● Special process technology for high ESD capability
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
Application
● DC/DC Primary Side Switch
● Telecom/Server
● Synchronous Rectification
PIN Configuration
Lead Free
Schematic diagram
SOP-8 top view
Marking and pin assignment
Package Marking and Ordering Information
Device Marking
MSN1010W
Device
MSN1010W
Device Package
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (T_A=25℃unless otherwise noted)
Drain-Source Voltage
Parameter
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Continuous(T_C=100℃)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
I_D
I_D (100℃)
I_DM
P_D
T_J,T_STG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient ^{(Note 2)}
R_θJA
Limit
100
±20
10
7
70
3.1
-55 To 150
40
Unit
V
V
A
A
A
W
℃
℃/W
MORE Semiconductor Company Limited
http://www.moresemi.com
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