MSN1008W Datasheet, PDF (1/6 Pages) MORE Semiconductor Company Limited – 100V(D-S) N-Channel Enhancement Mode Power MOS FET

MSN1008W
100V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● V_DS = 100V,I_D =8A
R_DS(ON) < 28mΩ @ V_GS=10V
(Typ:22mΩ)
● Special process technology for high ESD capability
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
Application
● DC/DC Primary Side Switch
● Telecom/Server
● Synchronous Rectification
PIN Configuration
Lead Free
Marking and pin assignment
SOP-8 top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN1008W
MSN1008W
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (T_A=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Continuous(T_C=100℃)
I_D
I_D (100℃)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
I_DM
P_D
T_J,T_STG
Limit
100
±20
8
5.6
57
2.6
-55 To 150
Unit
V
V
A
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient ^{(Note 2)}
R_θJA
48
℃/W
MORE Semiconductor Company Limited
http://www.moresemi.com
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