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MSN1006U Datasheet, PDF (1/6 Pages) MORE Semiconductor Company Limited – 100V(D-S) N-Channel Enhancement Mode Power MOS FET | |||
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MSN1006U
100V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
â VDS = 100V,ID = 6A
RDS(ON) < 140m⦠@ VGS=10V (Typ:110mâ¦)
â High density cell design for ultra low Rdson
â Fully characterized avalanche voltage and current
â Excellent package for good heat dissipation
Application
â Power switching application
â Hard switched and high frequency circuits
â Uninterruptible power supply
Lead Free
PIN Configuration
Marking and pin assignment
D
G
S
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN1006U
MSN1006U
SOT-223-3L
Reel Size
Ã330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25âunless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
100
±20
6
24
3
-55 To 150
Unit
V
V
A
A
W
â
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
41.7
â/W
MORE Semiconductor Company Limited
http://www.moresemi.com
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