MSN1002T Datasheet, PDF (1/6 Pages) MORE Semiconductor Company Limited – 100V(D-S) N-Channel Enhancement Mode Power MOS FET

MSN1002T
100V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS = 100V,ID = 2A
RDS(ON) <240mΩ @ VGS=10V
(Typ:200mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation
Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply
Lead Free
PIN Configuration
D
G
S
TO-92 view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN1006T
TO-92
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (T_A=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed ^{(Note 1)}
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
100
±20
2
5
1.25
-55 To 150
Unit
V
V
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient ^{(Note 2)}
RθJA
100
℃ /W
MORE Semiconductor Company Limited
http://www.moresemi.com
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