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MSN0980K Datasheet, PDF (1/6 Pages) MORE Semiconductor Company Limited – 85V(D-S) N-Channel Enhancement Mode Power MOS FET | |||
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MSN0980K
85V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
â VDS =85V,ID =80A
RDS(ON) < 8.5m⦠@ VGS=10V
(Typ:6.8mâ¦)
â High density cell design for ultra low Rdson
â Fully characterized avalanche voltage and current
â Special designed for convertors and power controls
â Good stability and uniformity with high EAS
â Excellent package for good heat dissipation
â Special process technology for high ESD capability
Lead Free
Application
â Power switching application
â Hard switched and High frequency circuits
â Uninterruptible power supply
Marking and pin assignment
PIN Configuration
TO-220-3L top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN0980K
MSN0980K
TO-220-3L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TA=25âunless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Continuous(TC=100â)
ID
ID (100â)
Pulsed Drain Current
Maximum Power Dissipation
Peak diode recovery voltage
IDM
PD
dv/dt
Derating factor
Single pulse avalanche energy (Note 5)
Operating Junction and Storage Temperature Range
EAS
TJ,TSTG
Limit
85
±20
80
60
320
170
15
1.13
620
-55 To 175
Unit
V
V
A
A
A
W
V/ns
W/â
mJ
â
MORE Semiconductor Company Limited
http://www.moresemi.com
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