MSN0880M Datasheet, PDF (1/6 Pages) MORE Semiconductor Company Limited – 75V(D-S) N-Channel Enhancement Mode Power MOS FET

MSN0880M
75V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● V_DS = 75V,I_D =80A
R_DS(ON) <8mΩ @ V_GS=10V（Typ：6.5mΩ）
● Special process technology for high ESD capability
● Special designed for Convertors and power controls
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Good stability and uniformity with high E_AS
● Excellent package for good heat dissipation
Lead Free
Application
● Power switching application
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply
PIN Configuration
Marking and pin assignment
TO-263-2L top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN0880M
MSN0880M
TO-263-2L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Continuous(T_C=100℃)
Pulsed Drain Current
Maximum Power Dissipation
Peak diode recovery voltage
I_D
I_D (100℃)
I_DM
P_D
dv/dt
Derating factor
Single pulse avalanche energy ^{(Note 5)}
E_AS
Operating Junction and Storage Temperature Range
T_J,T_STG
Limit
75
±25
80
60
320
170
15
1.13
580
-55 To 175
Unit
V
V
A
A
A
W
V/ns
W/℃
mJ
℃
MORE Semiconductor Company Limited
http://www.moresemi.com
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