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MSN0880H Datasheet, PDF (1/6 Pages) MORE Semiconductor Company Limited – 75V(D-S) N-Channel Enhancement Mode Power MOS FET | |||
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MSN0880H
75V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
â VDS = 75V,ID =80A
RDS(ON) <8m⦠@ VGS=10Vï¼Typï¼6.5mâ¦ï¼
â Special process technology for high ESD capability
â Special designed for Convertors and power controls
â High density cell design for ultra low Rdson
â Fully characterized Avalanche voltage and current
â Good stability and uniformity with high EAS
â Excellent package for good heat dissipation
Application
â Power switching application
â Hard Switched and High Frequency Circuits
â Uninterruptible Power Supply
PIN Configuration
Lead Free
Marking and pin assignment
TO-247 top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN0880H
MSN0880H
TO-247
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TA=25âunless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Continuous(TC=100â)
Pulsed Drain Current
Maximum Power Dissipation
Peak diode recovery voltage
ID
ID (100â)
IDM
PD
dv/dt
Derating factor
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
75
±25
80
60
320
180
30
1.2
600
-55 To 175
Unit
V
V
A
A
A
W
V/ns
W/â
mJ
â
MORE Semiconductor Company Limited
http://www.moresemi.com
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