MSN0860D Datasheet, PDF (1/6 Pages) MORE Semiconductor Company Limited – 75V(D-S) N-Channel Enhancement Mode Power MOS FET

MSN0860D
75V(D-S) N-Channel Enhancement Mode Power MOS FET
Features
● V_DS=75V；I_D=60A@ V_GS=10V；
R_DS(ON)<8.5mΩ @ V_GS=10V
● Special process technology for high ESD capability
● Special designed for Convertors and power controls
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Good stability and uniformity with high E_AS
● Excellent package for good heat dissipation
Application
● Power switching application
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply
Lead Free
Marking and pin assignment
PIN Configuration
TO-252-2L top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN0860D
MSN0860D
TO-252-2L
Reel Size
-
Tape width
-
Quantity
-
Table 1. Absolute Maximum Ratings (T_C=25℃)
Parameter
Drain-Source Voltage (V_GS=0V）
Gate-Source Voltage (V_DS=0V)
Drain Current (DC) at Tc=25℃
Drain Current (DC) at Tc=100℃
Drain Current-Continuous@ Current-Pulsed ^{(Note 1)}
Peak diode recovery voltage
Maximum Power Dissipation(Tc=25℃)
Derating factor
Single pulse avalanche energy ^{(Note 2)}
Operating Junction and Storage Temperature Range
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2.EAS condition：Tj=25℃,VDD=37.5V,VG=10V,L=0.5mH
Symbol
V_DS
V_GS
I_{D (DC)}
I_{D (DC)}
I_{DM (pluse)}
dv/dt
P_D
E_AS
T_J,T_STG
Value
75
±20
60
42
310
30
140
0.95
300
-55 To 175
Unit
V
V
A
A
A
V/ns
W
W/℃
mJ
℃
MORE Semiconductor Company Limited
http://www.moresemi.com
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