MSN06M3E-SOT23 Datasheet, PDF (1/6 Pages) MORE Semiconductor Company Limited – 60V(D-S) N-Channel Enhancement Mode Power MOS FET

MSN06M3E
60V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● V_DS = 60V,I_D = 0.3A
R_DS(ON) < 3Ω @ V_GS=5V
R_DS(ON) < 2Ω @ V_GS=10V
ESD Rating：HBM 2300V
● High power and current handing capability
● Lead free product is acquired
● Surface mount package
● ESD protected
Application
●Direct logic-level interface: TTL/CMOS
●Drivers: relays, solenoids, lamps, hammers,display,
memories, transistors, etc.
●Battery operated systems
●Solid-state relays
Lead Free
Marking and pin assignment
PIN Configuration
SOT-23 top view
Schematic diagram
Package Marking And Ordering Information
Device Marking
Device
MSN06M3E
Device Package
SOT-23
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (T_A=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current (T_J =150℃)
Drain Current-Pulsed ^{(Note 1)}
T_A =25℃
T_A =100℃
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
VGS
I_D
I_DM
P_D
T_J,T_STG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient ^{(Note 2)}
R_θJA
Limit
60
±20
0.3
0.19
0.8
0.35
-55 To 150
350
Unit
V
V
A
A
W
℃
℃/W
MORE Semiconductor Company Limited
http://www.moresemi.com
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