MSN06B0F Datasheet, PDF (1/6 Pages) MORE Semiconductor Company Limited – 60V(D-S) N-Channel Enhancement Mode Power MOS FET

MSN06B0F
60V(D-S) N-Channel Enhancement Mode Power MOS FET
General Feature
● V_DS =60V,I_D =100A
R_DS(ON) < 6.5mΩ @ V_GS=10V
(Typ:5.7mΩ)
● Special process technology for high ESD capability
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Good stability and uniformity with high E_AS
● Excellent package for good heat dissipation
Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply
PIN Configuration
Lead Free
Marking and pin assignment
TO-220F top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN06B0F
MSN06B0F
TO-220F
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (T_C=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Continuous(T_C=100℃)
I_D
I_D (100℃)
Pulsed Drain Current
I_DM
Maximum Power Dissipation
P_D
Derating factor
Single pulse avalanche energy ^{(Note 5)}
E_AS
Operating Junction and Storage Temperature Range
T_J,T_STG
Limit
60
±20
100
70
320
45
0.3
550
-55 To 175
Unit
V
V
A
A
A
W
W/℃
mJ
℃
MORE Semiconductor Company Limited
http://www.moresemi.com
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