MSN0612W Datasheet, PDF (1/6 Pages) MORE Semiconductor Company Limited – 60V(D-S) N-Channel Enhancement Mode Power MOS FET

MSN0612W
60V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● V_DS = 60V,I_D =12A
R_DS(ON) < 11mΩ @ V_GS=10V (Typ:8.6mΩ)
R_DS(ON) < 14mΩ @ V_GS=4.5V (Typ:10.3mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Low gate to drain charge to reduce switching losses
Lead Free
Application
● Power switching application
● Load switch
PIN Configuration
Schematic diagram
SOP-8 top view
Marking and pin assignment
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN0612W
MSN0612W
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (T_C=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
I_D
Drain Current-Continuous(T_C=100℃)
I_D (100℃)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
I_DM
P_D
T_J,T_STG
Limit
60
±20
12
8.5
120
3
-55 To 150
Unit
V
V
A
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient ^{(Note 2)}
R_θJA
42
℃/W
MORE Semiconductor Company Limited
http://www.moresemi.com
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