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MSN0608W-SOP8 Datasheet, PDF (1/6 Pages) MORE Semiconductor Company Limited – 60V(D-S) N-Channel Enhancement Mode Power MOS FET | |||
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MSN0608W
60V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
â VDS = 60V,ID =8A
RDS(ON) < 20m⦠@ VGS=10V
(Typ:14.5mâ¦)
â High density cell design for ultra low Rdson
â Fully characterized avalanche voltage and current
â Low gate to drain charge to reduce switching losses
Lead Free
Application
â Power switching application
â Load switch
PIN Configuration
Marking and pin assignment
SOP-8 top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN0608W
MSN0608W
SOP-8
Reel Size
-
Tape width
-
Quantity
2500 units
Absolute Maximum Ratings (TC=25âunless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100â)
ID (100â)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
IDM
PD
TJ,TSTG
Limit
60
±20
8
5.6
32
2.1
-55 To 150
Unit
V
V
A
A
A
W
â
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
60
â/W
MORE Semiconductor Company Limited
http://www.moresemi.com
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