MSN0603Y Datasheet, PDF (1/6 Pages) MORE Semiconductor Company Limited – 60V(D-S) N-Channel Enhancement Mode Power MOS FET

MSN0603Y
60V(D-S) N-Channel Enhancement Mode Power MOS FET
General Feature
● V_DS =60V,I_D =3.0A
R_DS(ON) <100mΩ @ V_GS=10V
R_DS(ON) < 120mΩ @ V_GS=4.5V
● High Power and current handing capability
● Lead free product is acquired
● Surface mount package
Application
●Battery switch
●DC/DC converter
Lead Free
PIN Configuration
Marking and Pin Assignment
SOT-89 -3L top view
D
G
S
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN0603Y
SOT-89-3L
Reel Size
Ø180mm
Tape width
12mm
Quantity
1000units
Absolute Maximum Ratings (T_A=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
I_D
Drain Current-Pulsed ^{(Note 1)}
I_DM
Maximum Power Dissipation
P_D
Operating Junction and Storage Temperature Range
T_J,T_STG
Limit
60
±20
3
10
1.7
-55 To 150
Unit
V
V
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient ^{(Note 2)}
R_θJA
73.5
℃/W
MORE Semiconductor Company Limited
http://www.moresemi.com
1/6