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MSN0603Y-SOT89 Datasheet, PDF (1/6 Pages) MORE Semiconductor Company Limited – 60V(D-S) N-Channel Enhancement Mode Power MOS FET | |||
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MSN0603Y
60V(D-S) N-Channel Enhancement Mode Power MOS FET
General Feature
â VDS =60V,ID =3.0A
RDS(ON) <100m⦠@ VGS=10V
RDS(ON) < 120m⦠@ VGS=4.5V
â High Power and current handing capability
â Lead free product is acquired
â Surface mount package
Application
âBattery switch
âDC/DC converter
Lead Free
PIN Configuration
Marking and Pin Assignment
SOT-89 -3L top view
D
G
S
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN0603Y
SOT-89-3L
Reel Size
Ã180mm
Tape width
12mm
Quantity
1000units
Absolute Maximum Ratings (TA=25âunless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
60
±20
3
10
1.7
-55 To 150
Unit
V
V
A
A
W
â
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
73.5
â/W
MORE Semiconductor Company Limited
http://www.moresemi.com
1/6
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