|
MSN05B2K-TO220 Datasheet, PDF (1/6 Pages) MORE Semiconductor Company Limited – 55V(D-S) N-Channel Enhancement Mode Power MOS FET | |||
|
MSN05B2K
55V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
â VDS =55V,ID =120A
RDS(ON) < 5.5m⦠@ VGS=10V (Typ:4.1mâ¦)
â High density cell design for ultra low Rdson
â Fully characterized avalanche voltage and current
â Good stability and uniformity with high EAS
â Excellent package for good heat dissipation
â Special process technology for high ESD capability
Lead Free
Application
â Power switching application
â Hard switched and high frequency circuits
â Uninterruptible power supply
PIN Configuration
Marking and pin assignment
TO-220-3L top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN05B2K
MSN05B2K
TO-220-3L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TA=25âunless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100â)
ID (100â)
Pulsed Drain Current
IDM
Maximum Power Dissipation
PD
Derating factor
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
55
±20
120
85
420
200
1.33
1100
-55 To 175
Unit
V
V
A
A
A
W
W/â
mJ
â
MORE Semiconductor Company Limited
http://www.moresemi.com
1/6
|
▷ |