|
MSN04C0K-TO220 Datasheet, PDF (1/6 Pages) MORE Semiconductor Company Limited – 40V(D-S) N-Channel Enhancement Mode Power MOS FET | |||
|
MSN04C0K
40V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
â VDS = 40V,ID =200A
RDS(ON) < 4m⦠@ VGS=10V (Typ:3.3mâ¦)
â Special process technology for high ESD capability
â High density cell design for ultra low Rdson
â Fully characterized avalanche voltage and current
â Good stability and uniformity with high EAS
â Excellent package for good heat dissipation
Lead Free
Application
â Power switching application
â Hard switched and high frequency circuits
â Uninterruptible power supply
PIN Configuration
Marking and pin assignment
TO-220-3L top view
Schematic diagram
Package Marking anMdSPO9r4d35eWring Information
Device Marking
Device
Device Package
MSN04C0K
MSN04C0K
TO-220-3L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25âunless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100â)
ID (100â)
Pulsed Drain Current
IDM
Maximum Power Dissipation
PD
Derating factor
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
40
±20
200
140
790
260
1.73
1500
-55 To 175
Unit
V
V
A
A
A
W
W/â
mJ
â
MORE Semiconductor Company Limited
http://www.moresemi.com
1/6
|
▷ |