MSN0412W Datasheet, PDF (1/6 Pages) MORE Semiconductor Company Limited – 40V(D-S) N-Channel Enhancement Mode Power MOS FET

MSN0412W
40V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● V_DS =40V,I_D =12A
R_DS(ON) <12mΩ @ V_GS=10V (Typ. 8.4 mΩ)
R_DS(ON) <18mΩ @ V_GS=4.5V (Typ. 12.3 mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high E_AS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Lead Free
Application
● Load switching
● Hard switched and high frequency circuits
● Uninterruptible power supply
Marking and pin Assignment
PIN Configuration
SOP-8 top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN0412W
MSN0412W
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (T_A=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Continuous(T_C=100℃)
I_D
I_D (100℃)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
I_DM
P_D
T_J,T_STG
Limit
40
±20
12
8.5
60
3
-55 To 150
Unit
V
V
A
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient^{(Note 2)}
R_θJA
41.7
℃/W
MORE Semiconductor Company Limited
http://www.moresemi.com
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