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MSN0412W-SOP8 Datasheet, PDF (1/6 Pages) MORE Semiconductor Company Limited – 40V(D-S) N-Channel Enhancement Mode Power MOS FET | |||
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MSN0412W
40V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
â VDS =40V,ID =12A
RDS(ON) <12m⦠@ VGS=10V (Typ. 8.4 mâ¦)
RDS(ON) <18m⦠@ VGS=4.5V (Typ. 12.3 mâ¦)
â High density cell design for ultra low Rdson
â Fully characterized avalanche voltage and current
â Good stability and uniformity with high EAS
â Excellent package for good heat dissipation
â Special process technology for high ESD capability
Lead Free
Application
â Load switching
â Hard switched and high frequency circuits
â Uninterruptible power supply
Marking and pin Assignment
PIN Configuration
SOP-8 top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN0412W
MSN0412W
SOP-8
Reel Size
Ã330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25âunless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Continuous(TC=100â)
ID
ID (100â)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
IDM
PD
TJ,TSTG
Limit
40
±20
12
8.5
60
3
-55 To 150
Unit
V
V
A
A
A
W
â
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient(Note 2)
RθJA
41.7
â/W
MORE Semiconductor Company Limited
http://www.moresemi.com
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