MSN0409W-SOP8 Datasheet, PDF (1/6 Pages) MORE Semiconductor Company Limited – 40V(D-S) N-Channel Enhancement Mode Power MOS FET

MSN0409W
40V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● V_DS =40V,I_D =9A
R_DS(ON) < 16mΩ @ V_GS=10V
R_DS(ON) < 24mΩ @ V_GS=4.5V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high E_AS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Lead Free
Application
● Load switching
● Hard switched and high frequency circuits
● Uninterruptible power supply
Marking and pin assignment
PIN Configuration
Schematic diagram
SOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN0409W
MSN0409W
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (T_C=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
I_D
Drain Current-Continuous(T_C=100℃)
I_D (100℃)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
I_DM
P_D
T_J,T_STG
Limit
40
±20
9
6.4
40
2
-55 To 150
Unit
V
V
A
A
A
W
℃
MORE Semiconductor Company Limited
http://www.moresemi.com
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