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MSN0360D Datasheet, PDF (1/6 Pages) MORE Semiconductor Company Limited – 30V(D-S) N-Channel Enhancement Mode Power MOS FET | |||
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MSN0360D
30V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
â VDS =30V,ID =60A
RDS(ON) < 14m⦠@ VGS=10V
â High density cell design for ultra low Rdson
â Fully characterized Avalanche voltage and current
â Good stability and uniformity with high EAS
â Excellent package for good heat dissipation
â Special process technology for high ESD capability
Lead Free
Application
â Power switching application
â Hard switched and high frequency circuits
â Uninterruptible Power Supply
PIN Configuration
Marking and pin assignment
TO-252-2L top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN0360D
MSN0360D
TO-252-2L
Reel Size
-
Tape width
-
Quantity
2500 units
Absolute Maximum Ratings (TC=25âunless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100â)
ID (100â)
Pulsed Drain Current
IDM
Maximum Power Dissipation
PD
Derating factor
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
30
±20
60
36.6
220
100
0.7
230
-55 To 175
Unit
V
V
A
A
A
W
W/â
mJ
â
MORE Semiconductor Company Limited
http://www.moresemi.com
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