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MSN0330D Datasheet, PDF (1/6 Pages) MORE Semiconductor Company Limited – 30V(D-S) N-Channel Enhancement Mode Power MOS FET | |||
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MSN0330D
30V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
â VDS =30V,ID =30A
RDS(ON) <14m⦠@ VGS=10V
RDS(ON) <25m⦠@ VGS=4.5V
â High density cell design for ultra low Rdson
â Fully characterized Avalanche voltage and current
â Good stability and uniformity with high EAS
â Excellent package for good heat dissipation
â Special process technology for high ESD capability
Lead Free
Application
â Power switching application
â Hard Switched and High Frequency Circuits
â Uninterruptible Power Supply
PIN Configuration
Marking and pin Assignment
TO-252-2L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN0330D
MSN0330D
TO-252-2L
Schematic diagram
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25âunless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100â)
ID (100â)
Pulsed Drain Current
IDM
Maximum Power Dissipation
PD
Derating factor
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
30
±20
30
21
80
40
0.27
72
-55 To 175
Unit
V
V
A
A
A
W
W/â
mJ
â
MORE Semiconductor Company Limited
http://www.moresemi.com
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