MSN0325R Datasheet, PDF (1/6 Pages) MORE Semiconductor Company Limited – 30V(D-S) N-Channel Enhancement Mode Power MOS FET

MSN0325R
30V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● V_DS =30V,I_D =25A
R_DS(ON) < 10mΩ @ V_GS=10V
R_DS(ON) < 14mΩ @ V_GS=4.5V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high E_AS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Lead Free
Application
● SMPS and general purpose applications
● Hard switched and high frequency circuits
● Uninterruptible power supply
Marking and pin Assignment
PIN Configuration
DFN 3x3 EP top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN0325R
MSN0325R
DFN 3x3 EP
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (T_C=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
I_D
Drain Current-Continuous(T_C=100℃)
I_D (100℃)
Pulsed Drain Current
I_DM
Maximum Power Dissipation
P_D
Derating factor
Single pulse avalanche energy ^{(Note 5)}
E_AS
Operating Junction and Storage Temperature Range
T_J,T_STG
Limit
30
±20
25
17
50
25
0.2
70
-55 To 150
Unit
V
V
A
A
A
W
W/℃
mJ
℃
MORE Semiconductor Company Limited
http://www.moresemi.com
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