MSN0318W Datasheet, PDF (1/6 Pages) MORE Semiconductor Company Limited – 30V(D-S) N-Channel Enhancement Mode Power MOS FET

MSN0318W
30V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● V_DS =30V,I_D =18A
R_DS(ON) < 7mΩ @ V_GS=10V
R_DS(ON) < 10mΩ @ V_GS=4.5V
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
Lead Free
Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply
Marking and pin Assignment
PIN Configuration
SOP-8 top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
MSN0318W
Device
MSN0318W
Device Package
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (T_A=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
I_D
Drain Current-Continuous(T_A=100℃)
I_D (100℃)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
I_DM
P_D
T_J,T_STG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient^{(Note 2)}
R_θJA
Limit
30
±20
18
12.7
48
3
-55 To 150
42
Unit
V
V
A
A
A
W
℃
℃/W
MORE Semiconductor Company Limited
http://www.moresemi.com
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