MSN0214WE Datasheet, PDF (1/7 Pages) MORE Semiconductor Company Limited – 20V(D-S) N-Channel Enhancement Mode Power MOS FET

MSN014WE
20V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● V_DS =20V,I_D =14A
R_DS(ON) <7 mΩ @ V_GS=4.5V
R_DS(ON) <9 mΩ @ V_GS=2.5V
ESD Rating: 2000V HBM
● High power and current handing capability
● Lead free product is acquired
● Surface mount package
● ESD protected
Application
● PWM application
● Load switch
PIN Configuration
Lead Free
Marking and pin Assignment
SOP-8 top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN0214WE
MSN0214WE
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (T_A=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
I_D
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
I_DM
P_D
T_J,T_STG
Limit
20
±10
14
44
3
-55 To 150
Unit
V
V
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient^{(Note 2)}
R_θJA
42
℃/W
MORE Semiconductor Company Limited
http://www.moresemi.com
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