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MSN0212W Datasheet, PDF (1/6 Pages) MORE Semiconductor Company Limited – 20V(D-S) N-Channel Enhancement Mode Power MOS FET | |||
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MSN0212W
20V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
âVDS =20V,ID =12A
RDS(ON) < 8m⦠@ VGS=10V
RDS(ON) < 11m⦠@ VGS=10V
â High density cell design for ultra low Rdson
â Fully characterized Avalanche voltage and current
Application
â DC/DC Converter
â Notebook Vcore
Lead Free
PIN Configuration
Marking and pin Assignment
SOP-8 top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN0212W
MSN0212W
SOP-8
Reel Size
Ã330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25âunless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Continuous(TA=100â)
ID
ID (100â)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
IDM
PD
TJ,TSTG
Limit
30
±20
12
8
40
2.5
-55 To 150
Unit
V
V
A
A
A
W
â
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient(Note 2)
RθJA
50
â/W
MORE Semiconductor Company Limited
http://www.moresemi.com
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