MSN0207E Datasheet, PDF (1/6 Pages) MORE Semiconductor Company Limited – 20V(D-S) N-Channel Enhancement Mode Power MOS FET

MSN0207E
20V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● V_DS = 20V,I_D =6.5A
R_DS(ON) <40mΩ @ V_GS=1.8V
R_DS(ON) <33mΩ @ V_GS=2.5V
R_DS(ON) <27mΩ @ V_GS=4.5V
ESD Rating: 2000V HBM
● High Power and current handing capability
● Lead free product is acquired
● Surface mount package
● ESD protected
Application
● PWM application
● Load switch
PIN Configuration
Lead Free
Marking and pin assignment
SOT-23 top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN0207E
SOT-23
Reel Size
Ø180mm
Tape width
8mm
Quantity
3000 units
Absolute Maximum Ratings (T_A=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
I_D
Drain Current-Pulsed ^{(Note 1)}
I_DM
Maximum Power Dissipation
P_D
Operating Junction and Storage Temperature Range
T_J,T_STG
Limit
20
±12
6.5
30
1.4
-55 To 150
Unit
V
V
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient ^{(Note 2)}
R_θJA
89
℃/W
MORE Semiconductor Company Limited
http://www.moresemi.com
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