|
MSN0205 Datasheet, PDF (1/6 Pages) MORE Semiconductor Company Limited – 20V(D-S) N-Channel Enhancement Mode Power MOS FET | |||
|
MSN0205
20V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
â VDS = 20V,ID = 5A
RDS(ON) < 35m⦠@ VGS=2.5V
RDS(ON) < 28m⦠@ VGS=4.5V
â High power and current handing capability
â Lead free product is acquired
â Surface mount package
Lead Free
Application
â Battery protection
â Load switch
â Power management
PIN Configuration
Marking and pin assignment
D
G
SOT-23 top view
S
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN0205
SOT-23
Reel Size
Ã180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25âunless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
20
±10
5
13.5
1.25
-55 To 150
Unit
V
V
A
A
W
â
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
100
â/W
MORE Semiconductor Company Limited
http://www.moresemi.com
1/6
|
▷ |