MSC4606W Datasheet, PDF (1/9 Pages) MORE Semiconductor Company Limited – N and P-Channel Enhancement Mode Power MOS FET

MSC4606W
N and P-Channel Enhancement Mode Power MOS FET
General Features
● N-Channel
V_DS = 30V,I_D =6.5A
R_DS(ON) < 30mΩ @ V_GS=10V
● P-Channel
V_DS = -30V,I_D = -7A
R_DS(ON) < 33mΩ @ V_GS=-10V
● High power and current handing capability
● Lead free product is acquired
● Surface mount package
PIN Configuration
Lead Free
Marking and pin assignment
SOP-8 top view
N-channel
P-channel
Schematic diagram
Package Marking and Ordering Information
Device Marking Device Device Package
MSC4606W
MSC4606W
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (T_A=25℃unless otherwise noted)
Parameter
Symbol
N-Channel
Drain-Source Voltage
V_DS
30
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current ^{(Note 1)}
Maximum Power Dissipation
T_A=25℃
T_A=70℃
T_A=25℃
V_GS
±20
6.5
I_D
5.4
I_DM
30
P_D
2.0
Operating Junction and Storage Temperature Range
T_J,T_STG
-55 To 150
P-Channel
-30
±20
-7
-5.8
-30
2.0
-55 To 150
Unit
V
V
A
A
W
℃
MORE Semiconductor Company Limited
http://www.moresemi.com
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