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MSC4606W-SOP8 Datasheet, PDF (1/9 Pages) MORE Semiconductor Company Limited – N and P-Channel Enhancement Mode Power MOS FET | |||
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MSC4606W
N and P-Channel Enhancement Mode Power MOS FET
General Features
â N-Channel
VDS = 30V,ID =6.5A
RDS(ON) < 30m⦠@ VGS=10V
â P-Channel
VDS = -30V,ID = -7A
RDS(ON) < 33m⦠@ VGS=-10V
â High power and current handing capability
â Lead free product is acquired
â Surface mount package
PIN Configuration
Lead Free
Marking and pin assignment
SOP-8 top view
N-channel
P-channel
Schematic diagram
Package Marking and Ordering Information
Device Marking Device Device Package
MSC4606W
MSC4606W
SOP-8
Reel Size
Ã330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25âunless otherwise noted)
Parameter
Symbol
N-Channel
Drain-Source Voltage
VDS
30
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
Maximum Power Dissipation
TA=25â
TA=70â
TA=25â
VGS
±20
6.5
ID
5.4
IDM
30
PD
2.0
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 To 150
P-Channel
-30
±20
-7
-5.8
-30
2.0
-55 To 150
Unit
V
V
A
A
W
â
MORE Semiconductor Company Limited
http://www.moresemi.com
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