MSC0605W Datasheet, PDF (1/6 Pages) MORE Semiconductor Company Limited – 60V(D-S) Dual N-Channel Enhancement Mode Power MOS FET

MSC0605W
60V(D-S) Dual N-Channel Enhancement Mode Power MOS FET
General Features
● V_DS =60V,I_D =4.5A
R_DS(ON) < 45mΩ @ V_GS=10V
（Typ：38mΩ）
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Low gate to drain charge to reduce switching losses
Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply
Lead Free
PIN Configuration
Marking and pin assignment
SOP-8 top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSC0605W
MSC0605W
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (T_A=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
I_D
Drain Current-Continuous(T_C=100℃)
I_D (100℃)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
I_DM
P_D
T_J,T_STG
Limit
60
±20
4.5
3.0
20
2
-55 To 150
Unit
V
V
A
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient^{(Note 2)}
R_θJA
62.5
℃/W
MORE Semiconductor Company Limited
http://www.moresemi.com
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