MSC0311WE Datasheet, PDF (1/6 Pages) MORE Semiconductor Company Limited – 30V(D-S) Dual N-Channel Enhancement Mode Power MOS FET

MSC0311WE
30V(D-S) Dual N-Channel Enhancement Mode Power MOS FET
General Features
● V_DS = 30V,I_D =11A
R_DS(ON) < 10mΩ @ V_GS=10V
R_DS(ON) < 14mΩ @ V_GS=4.5V
ESD Rating: 2000V HBM
● High power and current handing capability
● Lead free product is acquired
● Surface mount package
● ESD proteted
Application
●PWM application
●Load switch
PIN Configuration
Lead Free
Marking and pin assignment
SOP-8 top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSC0311WE
MSC0311WE
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (T_A=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
I_D
Drain Current-Pulsed ^{(Note 1)}
I_DM
Maximum Power Dissipation
P_D
Operating Junction and Storage Temperature Range
T_J,T_STG
Limit
30
±10
11
50
2.5
-55 To 150
Unit
V
V
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient ^{(Note 2)}
R_θJA
50
℃/W
MORE Semiconductor Company Limited
http://www.moresemi.com
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